Highly (100) oriented MgO growth on thin Mg layer in MTJ structure

Abstract

In order to apply Stress Assisted Magnetization Reversal (SAMR) method to perpendicular magnetoresistive random access memory (p-MRAM) with magnetic tunnel junction (MTJ) using MgO (001) oriented barrier layer, multilayer of Ta/ Terfenol-D/ Mg/ MgO and Ta/ Terfenol-D/ MgO were prepared. While the MgO layer, deposited directly on the Terfenol-D layer, did not show (100) orientatin, very thin metallic Mg layer, deposited prior to the MgO deposition, was effective to attain MgO (100) orientation. The crystalline orientation was very weak without Mg, however, the multilayer with Mg showed very strong MgO(100) peak and the MgO orientation was shifted depending on the Mg thickness.