Abstract
Improved device performance of InGaAs channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) has been achieved by utilizing InP and InAlAs barrier layer. In0.7Ga0.3As buried-channel MOSFETs with various InP barrier thicknesses and InP/InAlAs double barrier have been fabricated and compared in terms of performances parameters such as drive current, transconductance, subthreshold swing (SS), and effective mobility. Devices with 1 nm InP barrier exhibits 59% increase in drive current and 65% increase in peak effective channel mobility compared to devices without barrier layer. With thicker barrier, devices show higher drive current and higher mobility. Devices with InP/InAlAs double barrier exhibit the highest effective channel mobility.
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