Abstract
Vertical structured Gallium nitride (GaN) p-n junction diodes with improved breakdown properties have been demonstrated using high-k dielectric passivation underneath the field plate. Simulation results at a reverse voltage of 1 kV showed that the maximum electric field near the mesa-etched p-n junction edges covered with film of dielectric constant k = 10 was reduced to 2.0 MV/cm from 3.0 MV/cm (SiO2 (k = 3.9)). The diodes were fabricated using the high-k mixed oxide of SiO2 and CeO2 with k = 12.3. I–V characteristics of the diode with a field plate showed a breakdown voltage above 2 kV with an increased avalanche resistance. This means that the electric field reduces at the periphery of the mesa-etched p-n junction and is uniformly formed across the whole p-n junction. It is clear that high-k dielectric film passivation and filed plate termination are essential techniques for GaN power devices.
Highlights
Gallium nitride (GaN) has been well recognized as the material whose electrical parameters are ideally suited for power devices as well as high frequency devices [1]
Some techniques have been applied to the GaN diodes with high breakdown voltage to reduce their maximum electric field
The maximum electric field of the GaN diodes can be decreased by field plate (FP) termination, the peak electric field is still located at the edge [8,9].The thickness of the dielectric film affects the depth of Electronics 2016, 5, 15; doi:10.3390/electronics5020015
Summary
Gallium nitride (GaN) has been well recognized as the material whose electrical parameters are ideally suited for power devices as well as high frequency devices [1]. Some techniques have been applied to the GaN diodes with high breakdown voltage to reduce their maximum electric field. These techniques are mesa-etched edge termination, guard rings and field plate (FP) termination [5,6,7]. The maximum electric field of the GaN diodes can be decreased by FP termination, the peak electric field is still located at the edge [8,9].The thickness of the dielectric film affects the depth of Electronics 2016, 5, 15; doi:10.3390/electronics5020015 www.mdpi.com/journal/electronics. Thin dielectric film is effective for the breakdown characteristics withinThin the p-n junction, as a result, field characteristics in the dielectricwithin film becomes the depletion region.
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