High-Gain Persistent Nonlinear Conductivity in High-Voltage Gallium Nitride Photoconductive Switches

Abstract

Wide-bandgap GaN optically-controlled switches have the potential for driving down the cost and size and improving the efficiency and capabilities of high voltage pulsed-power applications. Key to these applications is the understanding of the high-field photo-conductive properties of this material to determine if it will operate in a high-gain and/or sub-bandgap triggering mode, such as has been observed in GaAs. Photoconductive semiconductor switches (PCSS) were fabricated and tested from GaN wafers from Kyma Technologies and Ammono. With relatively low voltages applied the switch, linear photoconductive currents are measured in response to exposure to laser pulses of sub-bandgap wavelength (532 nm). Above a threshold voltage applied to the PCSS, persistent conductivity is measured that lasts well beyond the duration of the laser pulse and discharges the charged transmission line in the system. The sustaining field for this switching mode is approximately 3kV/cm. Another known distinguishing characteristic of high-gain switching is the formation of filamentary current channels that can be imaged due to the emission of recombination radiation from the plasma within the filaments. These filaments have been also observed in the GaN switches. High-gain switching has been initiated in GaN devices with as little as 2.5 μJ laser energy. This persistent photoconductivity is a distinguishing characteristic of what is known as lock-on effect most notably known in GaAs-based photoconductive switches, and is the basis for highly-efficient photoconductive switching requiring relatively little laser energy.