Abstract
High gain, large bandwidth, and low noise avalanche photodetectors (APDs) are increasingly attractive for use in high-bit-rate optical communication systems because of the internal gain provided by APDs. Silicon avalanche photodetectors are well-known for their large gain bandwidth product, low excess noise figure, and good temperature sensitivity. Using wafer fusion, we have demonstrated an 81-GHz gain bandwidth product Si/InGaAs APD, which can be used in the 1.3-1.6 /spl mu/m wavelength regime. Here, we analyze the performance of Si/InGaAs APDs and present the optimized design for these APDs.
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