Abstract
The junction capacitance in resonant interband tunneling diodes is determined using microwave impedance measurements from 40 MHz to 62 GHz and network parameter extraction. The shape of the capacitance in the positive differential resistance region is totally different from the resonant tunneling diode. The difference can be explained by the intrinsic transport process of carriers in a resonant interband tunneling diode, what is manifested in the conductance characteristic of the device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
