Abstract
The surface topography development of Si(1 0 0), Si(1 1 1), oxide/Si and nitride/Si structures under high normal fluence (1 × 10 16–2.6 × 10 18 ions cm −2) keV Co metal vapour vacuum arc (MEVVA) irradiation has been investigated by scanning electron microscopy (SEM). The results show that for normal fluences up to ∼10 17 ions cm −2, the surface topography remains flat. As the fluence increases, pores develop and grow to form a columnar structure. At even higher fluences the columns are eroded to form an acicular structure. Deposition of a silicon dioxide or nitride layer on the Si surface leads to a significant suppression of the onset fluence for the formation of a rough surface. The porous surface could not be transformed to the network of acicular structures or a flat surface by high temperature annealing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
