Abstract
We present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm-thick crystal of high purity silicon (∼15 kΩ-cm) at temperatures of 5 K and 500 mK. We use these data to measure lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis and to verify our low-temperature Monte Carlo software. The range of field strengths in this paper exceed those used in our previous study [R. A. Moffatt et al., Appl. Phys. Lett. 114, 032104 (2019)] by a factor of 10 and now encompass the region in which some recent silicon dark matter detectors operate [R. Agnese et al., Phys. Rev. Lett. 121, 051301 (2018)]. We also report on a phenomenon of surface charge trapping, which can reduce expected charge collection.
Highlights
0.98 me and 0.19 me in the momentum space directions parallel and perpendicular to the valley axis, respectively
We present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm-thick crystal of high purity silicon (∼15 kΩ-cm) at temperatures of 5 K and 500 mK
We use these data to measure lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis and to verify our low-temperature Monte Carlo software
Summary
0.98 me and 0.19 me in the momentum space directions parallel and perpendicular to the valley axis, respectively.9. We use these data to measure lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis and to verify our low-temperature Monte Carlo software.
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