Abstract
With the carrier distribution function approximated by the first two terms in its Legendre series expansion and the scattering effect by a momentum relaxation time, current-voltage characteristics have been derived with and without considering the effects of applied transverse magnetic field in two-valley n-type semiconductors. The analysis indicates that the applied transverse magnetic field tends to change the electron mobility and to lower the electron population in the upper valley relative to that in the lower valley. The computed results for n-GaAs are in reasonable agreement with presently available experimental ones.
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