High-Field Electron Transport in a-Si:H

Abstract

High-electric-field electron transport in a-Si:H films has been investigated by means of time-of-flight (TOF) measurements. The drift mobility increased with increasing applied field at lower temperature (≤300 K), accompanied by a simultaneous increase in the dispersion parameter resulting in nondispersive transport. The mobility was much less field-dependent at higher temperature where the nondispersive transport was attained. The experimental results are consistently explained by taking account of the increase in electron temperature (hot electron) at higher field into the theory of dispersive transport.