Abstract
The topic of this contribution is the investigation of transient, nonequilibrium high-field electron transport in GaAs. Our two key ingredients are a unique laser system, which provides fs pump and probe pulses of independently tunable wavelengths and an AlGaAs hetero p–i–n diode with sophisticated design. This combination allows us to obtain time- and spatially resolved information about the temporal evolution of a photo-generated electron ensemble from ballistic to side-valley dominated transport, without disturbing hole contributions. Fields ranging from 7 to 180 kV/cm are investigated. Results are compared successfully to Monte Carlo Simulations.
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