Abstract
AbstractA new approach to design the electron–optical phonon scattering rate in a quantum well (QW), based on the dependence of interface phonon frequency upon QW interface composition, is suggested. Possibilities to regulate a scattering rate of electrons by interface phonons in the InGaAs QW by selecting QW barrier materials are considered. It is shown that the electron–interface phonon scattering rate in the In0.2Ga0.8As QW can be changed by several times by choosing content x in the Alx Ga1–x As QW barriers and in the inserted Inx Al1–x As barrier in the QW centre. It is observed experimentally that the low‐field mobility decreases and the high‐field saturated drift velocity increases with the increase of the Iny Ga1–y As/ Inx Al1–x As interface phonon energy. It is shown that the electron drift velocity saturates at the electric field F > 4 kV/cm and achieves values of 1.3–1.5 × 107 cm/s. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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