Abstract
To improve the performance of GaAs NEA photocathodes, an exponential-doping structure GaAs material has been put forward, in which from the GaAs bulk-to-surface doping concentration is distributed exponentially from high to low. We apply this exponential-doping GaAs structure to the transmission-mode GaAs photocathodes. This sample was grown on the high quality p-type Be-doped GaAs (100) substrate by MBE. We have calculated the band-bending energy in exponential-doping GaAs emission-layer, and the total band-bending energy is 59 meV which helps to improve the photoexcited electrons movement towards surface for the thin epilayer. The integrated sensitivity of the exponential-doping GaAs photocathode samples reaches 1547uA/lm.
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