Abstract

Cast monocrystalline silicon is a high-quality photovoltaic material with low fabrication cost, the developing trend is to increase quality stability. This work focuses on solving the edge multicrystalline region and related defects. By setting the modified seeds using Siemens polycrystalline raw silicon at the ingot edges, high-quality cast monocrystalline silicon and high-performance multicrystalline silicon can be obtained simultaneously in the same ingot, reducing the use of Czochralski seed and significantly improving the crystal quality and cell conversion efficiency in the edge region.

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