Abstract
The authors use symmetry arguments to show a higher-order Van Hove singularity in mirror-symmetric twisted trilayer graphene, which is tuned by varying the twist angle and a perpendicular electric field by gating.
Highlights
Strong correlations generally result from a quenching of electronic motion, comparatively magnifying the strength of electron-electron interactions
We have found that Twisted trilayer graphene (TTG) hosts a zero-energy higher-order Van Hove singularity with an exponent −1/3 that is stronger than the one predicted in twisted bilayer graphene
We derived the existence of a higher-order Van Hove singularity (VHS) in mirror-symmetric TTG associated with a strong zero-energy peak in the density of states
Summary
Strong correlations generally result from a quenching of electronic motion, comparatively magnifying the strength of electron-electron interactions. Conventional Van Hove singularities entail a logarithmic singularity, but there are higher-order types [3,4] with more diverging power-law scaling which have been recently classified in single-band electron models [5,6]. In this Letter, we argue that a strong higher-order Van Hove singularity emerges in the single-particle spectrum of TTG upon tuning the displacement field and rotation angle. It results from the symmetric merging at zero energy of two standard VHS with opposite energies.
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