Higher-order Laue zone diffraction from crystals containing transverse stacking faults

Abstract

Abstract An accessible theory of higher-order Laue zone (HOLZ) diffraction from crystals containing transverse stacking faults is presented. This is used to investigate the sensitivity of intensity profiles to displacement vector, fault depth and absorption effects. In particular, the phenomenon of HOLZ line splitting is seen to arise as a natural consequence of the theory. A comparison with experimental results from 2Hb-MoS2 is made in which the evaluation of absorption parameters is shown to be an important consideration. Finally, some general implications of the results with regard to defect characterization are discussed.