High-entropy alloy: An alternative approach for high temperature microwave-infrared compatible stealth

Abstract

To achieve microwave-infrared compatible stealth in high temperature conditions, high-entropy alloys (HEAs) thin films were deposited on Al2O3 matrix by magnetron sputtering technology. Films were annealed to investigate thermal stability at 500 °C, 600 °C and 700 °C, respectively. Results from X-ray diffract meter (XRD), atomic force microscope (AFM), scanning electron microscope (SEM), and Fourier transform infrared spectrometer (FTIR) suggested that high-entropy alloy (HEA) film was seriously oxidized when the annealed temperature reached 700 °C for 6 h, causing a significant decrease of infrared reflectivity. Conversely, HEA films showed low infrared emissivity of 0.09 at 600 °C. Additionally, the films possessed excellent thermal stability at 500 °C for 20 h with low infrared emissivity of 0.11. Finally, a simple metamaterial design utilizing HEA films was proposed for infrared-microwave compatible stealth. With the ability of incorporating excellent thermal stability and durable high temperature stealth performance, the study shows great potential of introducing HEAs in the field of high temperature compatible stealth.