Abstract
Electric-field-dependent dc dark conductivity data measured over a broad temperature (10≤T≤300 K) and field regime (10 2 ≤F≤6×10 5 V/cm) in phosphorus- and boron-doped and intrinsic amorphous hydrogenated silicon (a-Si:H) are described. The data demonstrate the strong inlluence of the electric field on carrier propagation. Enhancements over six orders of magnitude in conductivity are achieved for fields greater than 10 5 V/cm, which changes a-Si:H films from highly insulating to very conductive at low temperatures
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