Abstract
Two new approximate full adders (FAs) are proposed by the multiplexers (MUXs) and OR gates with the gate diffusion input (GDI) technique. The cells are named GDI-based MUX approximate FAs (GMAFAs), GMAFA1, and GMAFA2. The threshold voltage drop of the GDI-based circuits is solved by carbon nanotube field-effect transistors (CNTFETs) technology and the dynamic threshold (DT) technique. The FAs have accurate Cout, approximate Sum, and a low number of transistors. They are low-power, high-speed, and energy-efficient for ripple-carry adders (RCAs). The GMAFA1 and GMAFA2 have a total area of 0.068 µm2 and 0.119 µm2, respectively, which demonstrate 27.8% and 54.55% improvement in power-delay-area-product (PDAP) in comparison with the best references. The results of error distance (ED), normalized mean error distance (NMED), power signal-to-noise ratio (PSNR), and energy-saving confirm the accuracy of the presented cells for image processing applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
