Abstract
High-efficiency GaAs single-drift IMPATT diodes have been developed up to 72 GHz using molecular-beam epitaxy. The design of the devices is based on a lower value of the electron drift velocity at high electric fields. The diodes are bonded on diamond heat sinks. The best efficiencies are 12.5% at 63 GHz with 450 mW output power and 10% at 72 GHz with 350 mW output power.
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