High-Efficiency GaN-Based Power Amplifiers for Envelope Nonlinearities’ Mitigation in VHF Wideband Polar-Mode Transmitters

Abstract

Space-based communications at the very high frequency (VHF) band for air traffic management is a new technology application under development that requires energy-efficient architectures to mitigate the power limitations of satellite platforms. The usage of high-efficiency radiofrequency (RF) transmitters can help reduce the power consumption, but nonlinearities concerning the amplified signal in wide fractional bandwidth systems are a problem to solve. This paper proposes a high-efficiency (RF) power amplifier (PA) for satellite communications at the VHF band that aims to reduce the envelope distortion inherent to wide fractional bandwidth multicarrier polar-mode transmitters. Its design is based on a solution called hybrid-coupled switching voltage PA in combination with gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed VHF PA prototype delivers up to 95 W from a 28 V power supply, with a drain efficiency about 80% within the 118 MHz to 138 MHz operating band. To test its linearity performance, operating in a polar-mode configuration, a GaN-based wideband envelope amplifier (EA) has been developed to modulate the RF PA supply port. This EA improves its power efficiency by combining it with a slow envelope power supply (SEPS). Some measurements have been taken for a 100 W peak envelope power (PEP) and 10 MHz (maximum carrier spacing) four-tone digitally-modulated test signal, where any distortion product is attenuated 46 dB below the average power of the amplified signal without applying any digital predistortion (DPD) technique.