Abstract
It has been found, that the rate of accommodation of energy of chemical reaction of the hydrogen atom's recombination via electronic channel on the surface of ZnS monocrystal increases by 5 orders of magnitude at the surface illumination by UV light. The effect is connected with the electronic accommodation of energy of the vibrationally excited molecule H V 2, formed during the reaction. It is attributed to the electrons of the fine traps and to the high-speed diffusion along the surface on the diffusion distance of d⩾100 Å.
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