Abstract
In recent years, Silicon Photomultipliers (SiPMs) have proven to be highly suitable devices for applications where high sensitivity to low-intensity light and fast responses are required. Among their many advantages are their low operational voltage when compared with classical photomultiplier tubes, mechanical robustness, and increased photon detection efficiency (PDE).Here we present a full characterization of a SiPM device technology developed in Italy by Fondazione Bruno Kessler, which is suitable for Cherenkov light detection in the Near-Ultraviolet (NUV) band. This device is a High-Density (HD) NUV SiPM, based on a microcell of 40μm×40μm and with an area of 6 × 6mm2, providing low levels of dark noise and high PDE peaking in the NUV band. This particular device has been selected to equip a part of the focal plane of the Schwarzschild–Couder Telescope (SCT) prototype proposed for the Cherenkov Telescope Array (CTA) Observatory.
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