Abstract
Metal-insulator-metal (MIM) capacitors have been fabricated with single dielectric stack (Gd2O3) and bilayer dielectric stacks of Eu2O3 and Gd2O3 (Gd2O3/Eu2O3 and Eu2O3/Gd2O3) for analog and DRAM applications. While Pt/Gd2O3/Pt capacitors provide the highest capacitance density (15 fF/μm2), Pt/Gd2O3/Eu2O3/Pt and Pt/Eu2O3/Gd2O3/Pt capacitors provide lower leakage current densities (1.2×10-5 A/cm2 and 2.7×10-5 A/cm2, respectively at -1 V) and lower quadratic voltage coefficient of capacitance (VCC) (331 ppm/V2 and 374 ppm/V2, respectively at 1 MHz). The barrier/trap heights and defect densities have been computed for the faricated devices. The improved performance of bilayer dielectric stacks (Gd2O3/Eu2O3 and Eu2O3/Gd2O3) is attributed to lower defect densities and higher barrier/trap heights.
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