Abstract
The junction- barrier-controlled Schottky (JBS) rectifier is a Schottky rectifier with a p- n junction grid structure integrated into the device structure to improve its reverse blocking characteristics. This paper reports the development of large area (0.5 cm 2), 30 V, JBS rectifiers capable of handling over 25 A of forward current while operating at up to 125°C with good reverse blocking characteristics. Trade-off curves between forward voltage drop and reverse leakage current are introduced to allow optimization of these devices.
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