Abstract
High-level conditions at the emitter-base junction and current crowding have both been invoked to explain gain falloff at high collector currents in bipolar transistors. Results indicating that high-level conditions in lightly doped collector regions may also lead to current gain reduction at high-current densities are presented; a dependence of gain on I c -1has been found experimentally.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
