High-aspect nano-groove fabrication in thick film resists using 150-kV high acceleration voltage electron beam lithography

Abstract

High acceleration voltage (150 kV) electron beam lithography is applied to two types of thick film resists with different contrasts (γ). When using 1.6-μm thick high-γ resist, the lowest width discrepancy, 35 nm, was observed at 150 kV in the cross-sectional shape, which was almost vertical. At 50 kV, the discrepancy was more than four times greater than the width at 150 kV. The 50-kV cross-sections were drop shaped. The maximum line widths were similar for both resists, while the top line widths were smaller for the high-γ resist than for the low- γ resist. In addition, Monte Carlo simulation results were consistent with the experimental values, especially at 150 kV.