High yield fabrication of chemically reduced graphene oxide field effect transistors bydielectrophoresis

Abstract

We demonstrate high yield fabrication of field effect transistors (FET) using chemicallyreduced graphene oxide (RGO) sheets. The RGO sheets suspended in water were assembledbetween prefabricated gold source and drain electrodes using ac dielectrophoresis. With theapplication of a backgate voltage, 60% of the devices showed p-type FET behavior, whilethe remaining 40% showed ambipolar behavior. After mild thermal annealing at200 °C, all ambipolar RGO FET remained ambipolar with increased hole andelectron mobility, while 60% of the p-type RGO devices were transformed toambipolar. The maximum hole and electron mobilities of the devices were 4.0 and1.5 cm2 V − 1 s − 1 respectively. High yield assembly of chemically derived RGO FET will have significantimpact in scaled up fabrication of graphene based nanoelectronic devices.