High work-function metal gate and high-k dielectrics for charge trap flash memory device applications

Sanghun Jeon Sanghun Jeon,Sangmoo Choi Sangmoo Choi,Jeong Hee Han Jeong Hee Han,Chungwoo Kim Chungwoo Kim,Hyunsang Hwang Hyunsang Hwang,Cheol Jong Choi Cheol Jong Choi,Junghoon Lee Junghoon Lee

doi:10.1109/essder.2005.1546651

High work-function metal gate and high-k dielectrics for charge trap flash memory device applications

Sanghun Jeon Sanghun Jeon, Sangmoo Choi Sangmoo Choi + Show 5 more

https://doi.org/10.1109/essder.2005.1546651

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Publication Date: Dec 12, 2005

Citations: 13

Affiliation: Samsung (South Korea), Gwangju Institute of Science and Technology

#Charge Trap Flash Memory Devices #High Work-function Metal Gate + Show 8 more

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Abstract

We report the impact of high work-function (/spl Phi//sub M/) metal gate and high-K dielectrics on memory properties of NAND type charge trap flash (CTF) memory devices. In this article, theoretical and experimental studies show that high /spl Phi//sub M/ gate and high permittivity (high-K) dielectrics play a key role in eliminating electron back tunneling (EBT) through the blocking dielectric during the erase operation. Techniques to improve erase efficiency of CTF memory devices with a fixed metal gate by employing various chemicals and structures are introduced and those mechanisms are discussed.

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