High-Volume Single-Wafer Reactors for Silicon Epitaxy

Abstract

A detailed three-dimensional simulation model has been used to explore new designs and operating conditions that will lead to high-volume production of single-crystal silicon wafers in horizontal single-wafer reactors. As the SiHCl3−H2 system is a widely used precursor for epitaxial silicon deposition in industrial applications, we have chosen to focus our model development on this system. Specifically, we have examined cases where the wafer is placed in the entrance laminar region of a developing turbulent flow and, in a fully developed turbulent flow. It has been shown that a short height and high flow rate reactor is the best design for high-volume production of quality wafers with minimum material usage. In addition, it has been demonstrated that short height and high flow rate reactors are ideal for production of large diameter wafers that operate at low wafer temperatures.