Abstract
High voltage pulse power supply using IGBT stacks and pulse transformer for plasma source ion implantation is proposed in this study. To increase voltage rating, twelve IGBTs are used in series and a step-up pulse transformer is utilized. To increase current rating, the proposed system makes use of synchronized three pulse generators composed of diode, capacitor and IGBT stack. The proposed pulse power supply uses only semiconductor switches made of IGBTs with only two active drivers. Hence, the system is compact, and has long lifetime, high efficiency, and high parameter flexibility such as voltage magnitude, the PRR. and the pulse width.
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