Abstract
A simple mathematical model of 4H:SiC sharp-recovery drift diodes with a p +-p-n 0-n + structure. With this model, the limiting electrical parameters of high-voltage (2–10 kV) pulse generators built around these diodes are theoretically estimated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
