Abstract
Dielectric elastomers exhibit remarkable elastic and electroactive properties. Upon kilovolt range electrical stimulation, the polymeric actuator deforms with very large mechanical strain. We made thin film amorphous silicon (a-Si:H) photoconductive switches on 50-μm thick flexible polyimide films to control the polymer actuation. 155–310-nm thick a-Si:H films were grown by plasma enhanced chemical vapor deposition at 150 °C substrate temperature. The photoconductive switches were made with 250-, 500- or 1000-μm gaps formed by electrodes of evaporated aluminum. When properly passivated, the switches have a dielectric breakdown strength of ∼10 kV/mm across the gap. We present optical and electrical characteristics of these a-Si:H switches in the 1–10 kV range. The integration of a nine-element a-Si:H high voltage photoconductor switch array with a nine-element electroactive polymer actuator array is demonstrated. The time constants measured on this array agree well with the values modeled using the a-Si:H photoconductor characteristics.
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