Abstract
3.3kV and 4.5kV 4H-SiC junction barrier Schottky (JBS) diodes with floating guard rings edge termination have been fabricated. The 3.3kV device with 33μm 2.7E15 cm-3epilayer and 5.5Х5.5mm2schottky contact area has a blocking voltage (Vb) of 3.9 kV and a specificon-resistance (Ron) of 10.5 mΩ.cm2, with a forward current measured up to 50A at VF=3.0V. The 4.5kV device with 50 um 1.2E15 cm-3epilayer and 5.5Х5.5mm2schottky contact area has a blocking voltage (Vb) of 5.1 kV and a specificon-resistance (Ron) of 22.9 mΩ.cm2, with a forward current of 30A at VF=3.7V.
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