High voltage (&gt;1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

Yanbin Luo Yanbin Luo,J.H Zhao,Jianhui Zhang Jianhui Zhang,L Fursin,P Alexandrov,T Burke

doi:10.1109/led.2003.819271

High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

Yanbin Luo Yanbin Luo, J.H Zhao + Show 4 more

https://doi.org/10.1109/led.2003.819271

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Journal: IEEE Electron Device Letters	Publication Date: Nov 1, 2003
Citations: 24

Affiliation: Rutgers, The State University of New Jersey, United Silicon Carbide (United States), United States Department of the Army, United States Army

#High Current Gain #High Dc Current Gain + Show 8 more

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Abstract

This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (>1kV) and high dc current gain (/spl beta/=32) at a collector current level of I/sub c/=3.83A (J/sub c/=319 A/cm/sup 2/). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly improved blocking voltage. A specific on-resistance of 17 m/spl Omega//spl middot/cm/sup 2/ has been achieved for collector current densities up to 289 A/cm/sup 2/.

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