Abstract
This study determined the effect of indium doping on the electrical properties of Al-doped ZnO varistors. Scanning electron microscopy, current-voltage testing in a range from small to large current, capacitance-voltage testing, and X-ray diffraction pattern testing were carried out. The results show that both the voltage gradient and nonlinear coefficient of sintered ZnO varistors increase and then decrease with increasing indium dopant at a given aluminum content. Meanwhile, the leakage current and residual voltage ratio show an inverse relationship. The varistor ceramic with 0.015mol% indium and 0.02mol% aluminum has optimal performance. This work is helpful for improving the protective effects of ZnO varistors and increasing the safety of electrical systems.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
