High-voltage GaN pin vertical rectifiers with 2 [micro sign]m thick i-Layer

Abstract

Gallium nitride pin rectifiers have been fabricated and characterised. The device structures were grown by metalorganic chemical vapour deposition on c-plane sapphire substrates. The pin diode epitaxial structure consisted of an n+-GaN layer, followed by a 2 µm i-GaN layer and a p-type GaN layer on top. The mesa-structure pin diodes exhibited a blocking voltage as large as Vr ≃ –410 V at a reverse current density of Ir ≃ 10 A/cm2 and a forward voltage drop of only 8 V at a forward current density of ~100 A/cm2. These values indicate that GaN-based pin rectifiers can be useful in high-voltage circuits.