Abstract
In the present work we have considered the prototype of the high-voltage diode stack made on the basis of commercial SiC Schottky diodes. Implementation of vertical integration for four diode chips yielded stack with the reverse current of 25 μA under reverse voltage of 6 kV. The capacitance of the stack at zero bias is reduced more than three times in comparison with initial diodes. Reverse recovery time of the stack was 8.0 ns. This paper proposes a convenient analytical approach to the estimation of parameters of modular compositions with vertical architecture.
Highlights
With the increasing commercial production of semiconductor devices based on silicon carbide, modular compositions are activated (e.g. [1])
It should be noted that the manufacture of high-voltage stacks in the above examples was used for silicon pn structures, and pin structures were used for the high-voltage GaAs diode stacks
Reference [4] reported that diffusion welding contact directly on the surface of silicon carbide led to a decrease in the potential barrier caused by the microplastic deformation of the contact silicon carbide surface
Summary
With the increasing commercial production of semiconductor devices based on silicon carbide, modular compositions are activated (e.g. [1]). For example in [2], High Voltage Power Solutions, Inc. offers a large range of commercial high-voltage diode stacks and rectifier assemblies. In [3], high-voltage GaAs diode stack models made by diffusion welding are presented.
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