Abstract
A high-performance quasi-vertical GaN Schottky barrier diode (SBD) was successfully fabricated by using a high-quality n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> -GaN drift layer with a precisely-controlled n-type doping. A high current on/off ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> , an ideality factor of 1.03, a low specific on-resistance of 1.41 mΩ·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , and a relatively high breakdown voltage (BV) of 250 V have been achieved for the SBD without edge termination. Furthermore, with an Argon-implanted termination, the as-fabricated GaN-on-Si SBD shows a record high BV of 405 V, yielding a critical electric field of ~ 2 MV/cm, while the forward conduction characteristics are well maintained.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
