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Abstract
We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.
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