Abstract
High-voltage AlGaN/GaN heterostructure field-effect transistors (HFETs) with graded gate field-plate (FP) structures were fabricated to investigate the effectiveness of a linearly graded FP structure on current collapse. To improve the reproducibility of the FP structure manufacturing process, a simple process for a linearly graded SiO2 profile formation was developed. A HFET with a 23°-angle FP exhibited a significantly decreased on-resistance increase ratio of 1.16 after application of a drain bias of 600 V.
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