High-Voltage a-Si TFTs Using Dual-Gate With a Common Gate Structure by Channel Electrons Concentration Regulation

Abstract

In this work, we report high-voltage amorphous silicon (a-Si) thin-film transistors (TFTs) using dual gate with a common gate structure, in which there are two extended electrodes with the same length at the junction of the two TFTs to regulate the electrons concentration in the channel. The working principle of the high-voltage a-Si TFTs is analyzed and their electrical performances are characterized. Results show that the high-voltage a-Si TFTs exhibit a maximum operating voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{V}_{\text{DS}}$</tex-math> </inline-formula> ) over 370 V and a stable output current. Meanwhile, the electrical performances of the high-voltage a-Si TFTs are not significantly degraded compared to the conventional a-Si TFTs. The fabrication process is similar to that of conventional a-Si TFTs and has low cost, which makes the high-voltage a-Si TFTs have broad application prospects in high-voltage electronics.