Abstract
A high voltage 6H-SiC lateral MESFET has been fabricated using a three mask process. Selective ion implantation was used to create the conducting layer (N-region) demonstrating the RESURF effect in SiC for first time, as well as easy isolation and edge termination. This MESFET was able to withstand a forward blocking voltage of 450 V at a gate voltage of -20 V. The specific on-resistance and transconductance for a device with a drain gate separation of 15 /spl mu/m was found to be 83 m/spl Omega/ cm/sup 2/ and 2 mS/mm, respectively.
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