Abstract
The effects of an intentional interface engineering of a heterogeneous CeO2-Nb:SrTiO3 interface on the resistive switching behaviors of HfO2-based resistive random access memory (RRAM) has been investigated. Switching parameters including set voltage, reset voltage, low resistance state and high resistance state, are greatly improved by the interface engineering. Besides, low power consumption RRAM, which is favorable for embedded information storage, is also acquired. This work provided a meaningful way for the improvement of uniformity as well as decreases the power consumption in bipolar resistive switching memory devices by interface engineering.
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