Abstract
We fabricated Fe/GaOx/Ga1−xMnxAs magnetic tunnel diodes that had a metal/insulator/semiconductor (MIS) structure. A tunneling magnetoresistance (TMR) ratio up to 58% was observed, which is the highest value yet reported in MIS-type TMR devices. This indicates that GaOx is an excellent tunnel-barrier material for spin-dependent transport between 3d-ferromagnetic metal and GaAs-based semiconductors.
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