High transparency and enhanced mobility of field-effect transistors of the semiconductor/insulator polymer blends with ultralow semiconductor content

Abstract

In this work, we report the achievement of transparent field effect transistors (FETs) with high performance by blending a narrow bandgap polymer PDPP2TBT into inert polystyrene (PS) matrix. Transmittance of nearly 100% across the whole visible range, as well as enhanced FET mobility compared to pure semiconductor films, is available on the blend films with a low PDPP2TBT/PS weight ratio of 0.5–1.0%. From film morphology observation, excellent transport characteristics on the blends of ultra-low semiconductor content is attributed to the formation of interlinked network of the PDPP2TBT aggregates throughout the PS matrix, which provides effective pathways for intra-chain carrier transport. The novel finding will present a promising route on the development of low-cost transparent electronics. • Fully transparent FETs are constructed by PDPP2TBT/polystyrene (PS) blends. • Blend FETs exhibit excellent electrical properties at ultralow copolymer content. • Interlinked network of the PDPP2TBT aggregates formed throughout the blend provides efficient carrier conduction pathways.