Abstract
An improved enhancement-mode GaAs MESFET was fabricated by a high dose Si ion implantation which was used to reduce the source and drain parasitic resistances, and by a Pt buried gate which was used to control the threshold voltage and reduce the interface states of the Schottky gate. 250 mS/mm transconductance has been obtained for 1-µm gate-length enhancement-mode GaAs MESFET.
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