Abstract
Magnetic tunnel junctions with Fe1+xCo2-xSi (0 < x < 1) electrodes and MgO barrier were prepared on MgO substrates by magnetron co-sputtering. Maximum tunnel magnetoresistance (TMR) ratios of 262 % at 15 K and 159 % at room temperature were observed for x=0.75. Correlations of the annealing temperature dependent atomic ordering and TMR amplitude are discussed. The high TMR for an intermediate stoichiometry is ascribed to the adjustment of the Fermi energy within a minority spin pseudo gap.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
