High-κ TiO2 thin film prepared by sol-gel spin-coating method

Abstract

High-k TiO2 thin film on p-type silicon substrate was fabricated by a combined sol-gel and spin coating method. Thus deposited titania film had anatase phase with a small grain size of 16 nm and surface roughness of ≅ 0.6 nm. The oxide capacitance (Cox), flat band capacitance (CFB), flat band voltage (VFB), oxide trapped charge (Qot), calculated from the high frequency (1 MHz) C-V curve were 0.47 nF, 0.16 nF, − 0.91 V, 4.7x10−12 C, respectively. As compared to the previous reports, a high dielectric constant of 94 at 1 MHz frequency was observed in the devices investigated here and an equivalent oxide thickness (EOT) was 4.1 nm. Dispersion in accumulation capacitance shows a linear relationship with AC frequencies. Leakage current density was found in acceptable limits (2.1e-5 A/cm2 for −1 V and 5.7e-7 A/cm2 for +1 V) for CMOS applications.