Abstract
Composition spread thin film samples of Nb and Ti were prepared by co-sputtering. The composition range from Nb–5 at.% Ti to Nb–78 at.% Ti was achieved and characterized by high resolution field emission scanning electron microscopy and grazing angle X-ray diffraction. Nb stabilized the β-Ti phase over the entire range studied. The structure was cubic with a continuous change in the lattice constants with composition. Several distinct compositional zones were identified in the as-deposited film morphology. Then, anodic oxides were grown potentiodynamically and characterized by electrochemical impedance spectroscopy using a scanning droplet cell to yield a comprehensive description of oxide film properties including dielectric permittivity, resistivity, thickness and film formation factor. Mott–Schottky analysis of potentiostatically grown oxides showed how the alloy composition influences the flat band potential and the donor density of the mixed n-type semiconducting oxides. Complementary X-ray photo electron spectroscopy as a chemical analysis revealed differences in the oxide compositions as compared to the as-deposited metal resulting from the different ion transport numbers.
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